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SA12 Datasheet, PDF (2/5 Pages) Cirrus Logic – PULSE WIDTH MODULATION AMPLIFIERS
SA12
Product Innova tionFrom
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
SUPPLY VOLTAGE, +VS
SUPPLY VOLTAGE, VCC
POWER DISSIPATION, internal
TEMPERATURE, pin solder - 10s
TEMPERATURE, junction3
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
INPUT VOLTAGE, +PWM
INPUT VOLTAGE, –PWM
INPUT VOLTAGE, ILIM
PARAMETER
TEST CONDITIONS2
MIN
TYP
CLOCK (CLK)
CLK OUT, high level4
CLK OUT, low level4
FREQUENCY
RAMP, center voltage
RAMP, P-P voltage
CLK IN, low level4
CLK IN, high level4
IOUT ≤ 1mA
IOUT ≤ 1mA
4.8
0
392
400
5
4
0
3.7
OUTPUT
TOTAL RON4
EFFICIENCY, 10A output
SWITCHING FREQUENCY
CURRENT, continuous4
CURRENT, peak4
VS = 200V
OSC in ÷ 2
65°C case
97
196
200
15
20
POWER SUPPLY
VOLTAGE, VS
VOLTAGE, VCC
CURRENT, VCC
CURRENT, VCC, shutdown
CURRENT, VS
ILIM/SHUTDOWN
TRIP POINT
INPUT CURRENT
Full temperature range
Full temperature range
IOUT = 0
No Load
16
120
14
15
90
THERMAL3
RESISTANCE, junction to case
Full temperature range, for each die
RESISTANCE, junction to air
Full temperature range
12
TEMPERATURE RANGE, case
Meets full range specifications
–25
200V
16V
250W1
300°C
150°C
–65 to +150°C
–55 to +125°C
0 to +11V
0 to +11V
0 to +10V
MAX
5.3
.4
408
.9
5.4
.4
204
200
16
125
80
200
110
100
1
+85
UNITS
V
V
kHz
V
V
V
V
Ω
%
kHz
A
A
V
V
mA
mA
mA
mV
nA
°C/W
°C/W
°C
NOTES: 1.
2.
3.
4.
Each of the two active output transistors can dissipate 125W.
Unless otherwise noted: TC = 25°C, VS, VCC at typical specification.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power
dissipation to achieve high MTTF. For guidance, refer to the heatsink data sheet.
Guaranteed but not tested.
CAUTION
The SA12 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush,
machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
SA12U