SA01 Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – THYRISTOR ARRAY SA SERIES FOR STROBE FLASHER

SA01 • SA01-6
Product Innova tionFrom
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PARAMETER
SUPPLY VOLTAGE, +V_S
OUTPUT CURRENT, peak
POWER DISSIPATION, internal
TEMPERATURE, pin solder - 10s
TEMPERATURE, junction²
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
SHUTDOWN VOLTAGE
REFERENCE LOAD CURRENT
ERROR AMP INPUT ±
100V
30A
185W¹
300°C
150°C
–65 to +150°C
–55 to +125°C
10V
10mA
0 to +12V
TEST CONDITIONS²
SA01
SA01-6
MIN TYP MAX MIN TYP
MAX
UNITS
ERROR AMP
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
BIAS CURRENT, initial
BIAS CURRENT, vs. temperature
OFFSET CURRENT, initial
OFFSET CURRENT, vs. temperature
COMMON MODE VOLTAGE RANGE⁴
COMMON MODE REJECTION, DC⁴
SLEW RATE
OPEN LOOP GAIN⁴
GAIN BANDWIDTH PRODUCT
T_C = 25°C
Full Temperature Range⁵
T_C = 25°C
Full Temperature Range⁵
T_C = 25°C
Full Temperature Range⁵
10
*
mV
50
50 µV/°C
5
*
µA
400
400 nA/°C
1
*
µA
80
80 nA/°C
2
8
*
*
V
75
*
dB
15

*
V/µS
75
*
dB
2

*
MHz
OUTPUT
TOTAL R_ON
EFFICIENCY, 10A OUTPUT
SWITCHING FREQUENCY
CURRENT, continuous⁴
CURRENT, peak⁴
V_S = 100V
Full temperature range⁵
.25

*
Ω
97

*
%
35.3
42 48.7 35
42
49
KHz
20
*
A
30
*
A
REFERENCE
VOLTAGE
VOLTAGE VS. TEMP
OUTPUT CURRENT
LOAD REGULATION⁴
LINE REGULATION
I_REF = 5mA
Full temperature range⁵
7.46 7.50 7.54
*
*
*
V
50
50 PPM/°C
5
5
mA
20
50
*
* PPM/mA
1

* PPM/V
POWER SUPPLY
VOLTAGE
CURRENT
CURRENT, shutdown
SHUTDOWN
TRIP POINT
INPUT CURRENT
Full temperature range⁵
I_OUT = 0, I_REF = 0,
Full temperature range⁵
I_REF = 0
16
50 100 16 50
100
V
76
90
76
93
mA
25
*
mA
.18
.22
*
*
V
100
*
nA
THERMAL²
RESISTANCE, junction to case⁴
RESISTANCE, junction to air⁴
TEMPERATURE RANGE, case
Full temp range, for each transistor
Full temperature range
Meets full range specifications⁵
–25
1.0
*
°C/W
12

*
°C/W
+85 –55
125
°C
NOTES: 1.
2.
3.
4.
5.
Each of the two active output transistors can dissipate 125W, however the N-channel will be about 1/3 of the total dissipated
power. Internal connection resistance is .05Ω.
Unless otherwise noted: T_C = 25°C.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF. For guidance, refer to the heatsink data sheet.
Guaranteed but not tested.
Full temperature range specifications apply to the operating case temperature range as specified under THERMAL. For the
SA01 these specifications are guaranteed but not tested. For the SA01-6 these specifications are tested over the SA01-6
operating case temperature range.
  CAUTION
The SA01 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
SA01U