PA90 Datasheet, PDF (2/6 Pages) Cirrus Logic – HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS

PA90
Product Innova tionFrom
EXTERNAL CONNECTIONS
1 2 3 4 5 6 7 8 9 10 11 12
Rc
–IN +IN
I_Q
(See text.)
Cc
R_CL
*
*
–Vs
TO LOAD
AND FEEDBACK
+Vs
* Bypassing required.
1. Characteristics and Specifications
Absolute Maximum Ratings
Parameter
SUPPLY VOLTAGE, +V_S to -V_S
OUTPUT CURRENT, source, sink, peak, within SOA
POWER DISSIPATION, continuous @ T_C = 25°C
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder, 10s max.
TEMPERATURE, junction (Note 2)
TEMPERATURE RANGE, storage
OPERATING TEMPERATURE RANGE, case
Symbol
Min
-20
-V_S
−40
−25
12-pin SIP
PACKAGE
STYLE DP
Formed leads available
See package EE
Max
400
350
30
20
V_S
260
150
85
85
Units
V
mA
W
V
V
°C
°C
°C
°C
CAUTION ^{The PA90 is constructed from MOSFET transistors. ESD handling procedures must be observed.}
The exposed substrate contains beryllia (BeO). Do not crush, machine, or subject to temperatures
in excess of 850°C to avoid generating toxic fumes.
Specifications
Parameter
AMPLIFIER INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE vs. temperature
OFFSET VOLTAGE vs. supply
OFFSET VOLTAGE vs. time
BIAS CURRENT, initial
BIAS CURRENT vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE
(Note 3)
COMMON MODE REJECTION, DC
NOISE
Test Conditions¹
Min
Typ
Full temperature range
0.5
15
10
75
200
4
50
10¹¹
4
±V_S Ŧ 15
V_CM = ±90V
80
98
100KHz bandwidth, R_S = 1KΩ,
1
C_C = OPEN
Max Units
2
50
25
2000
500
mV
µV/°C
µV/V
µV/kHz
pA
pA/V
pA
Ω
pF
V
dB
µV RMS
2
PA90U