PA119CE_10 Datasheet, PDF (2/5 Pages) Cirrus Logic – Video Power Operational Amplifier

PA119CE • PA119CEA
Product Innovation From
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V_S to –V_S
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder — 10 sec
TEMPERATURE, junction¹
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
80V
5A
75W
40V
±V_S
300°C
175°C
–65 to 150°C
–55 to 125°C
SPECIFICATIONS
PARAMETER
TEST CONDITIONS ²
PA119
PA119A
MIN TYP MAX MIN TYP MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs. supply
OFFSET VOLTAGE, vs. power
BIAS CURRENT, initial
BIAS CURRENT, vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE³
COMMON MODE REJECTION, DC
T_C = 25°C
T_C = 25°C to +85°C
T_C = 25°C
T_C = 25°C to +85°C
T_C = 25°C
T_C = 25°C
T_C = 25°C
T_C = 25°C
T_C = 25°C
T_C = 25°C to +85°C
T_C = 25°C to +85°C, V_CM = ±20V
GAIN
OPEN LOOP GAIN at 10Hz
T_C = 25°C, R_L = 1KΩ
OPEN LOOP GAIN at 10Hz
T_C = 25°C, R_L = 15Ω
GAIN BANDWIDTH PRODUCT at 1MHz T_C = 25°C, C_C = 2.2pF
POWER BANDWIDTH, A_V = 100
T_C = 25°C, C_C = 2.2pF
POWER BANDWIDTH, A_V = 1
T_C = 25°C, C_C = 330pF
OUTPUT
VOLTAGE SWING³
VOLTAGE SWING³
VOLTAGE SWING³
SETTLING TIME to .1%
SETTLING TIME to .01%
SLEW RATE, A_V = 100
SLEW RATE, A_V = 10
T_C = 25°C, I_O = 4A
T_C = 25°C to +85°C, I_O = 2A
T_C = 25°C to +85°C, I_O = 78mA
T_C = 25°C, 2V step
T_C = 25°C, 2V step
T_C = 25°C, C_C = 2.2pF
T_C = 25°C, C_C = 22pF
POWER SUPPLY
VOLTAGE
CURRENT, quiescent
T_C = 25°C to +85°C
T_C = 25°C
THERMAL
RESISTANCE, AC, junction to case⁴
RESISTANCE, DC, junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
T_C = 25°C to +85°C, F > 60Hz
T_C = 25°C to +85°C, F < 60Hz
T_C = 25°C to +85°C
Meets full range specifications
±.5
10
10
20
10
.01
5
10¹¹
6
±V_S–15 ±V_S–12
70 104
±3
30


200

100


*
*
±.35 ±.75
5
15
*
*
5
50
*
3
25
*
*
*
*
mV
µV/°C
µV/V
µV/W
pA
pA/V
pA
MΩ
pF
V
dB
111
74
88
100
3.5
250

*



*
*
*
*
*
dB
dB
MHz
MHz
kHz
±V_S–5 ±V_S–1.5
±V_S–3 ±V_S–.75
±V_S–1 ±V_S–.5
.3
1.2
600 900
650
*
*
*


750

*
*
*
*
*
*
*
V
V
V
µs
µs
V/µs
V/µs
±15 ±35 ±40
*
*
100 120
*
*
V
*
mA
1.46 1.64
*
*
1.84 2.0
*
*
30

*
–25
+85
*
*
°C/W
°C/W
°C/W
°C
NOTES: *
1.
2.
3.
4.
The specification of PA119A is identical to the specification for PA119 in applicable column to the left.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF.
The power supply voltage for all specifications is the TYP rating unless noted as a test condition.
+V_S and –V_S denote the positive and negative supply rail respectively. Total V_S is measured from +V_S to –V_S.
Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
CAUTION
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
2
PA119U