CPA241 Datasheet, PDF (1/2 Pages) Cirrus Logic – HIGH POWER OPERATIONAL AMPLIFIER

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CPACP2A42411
High Power Operational Amplifier
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V_S to –V_S
OUTPUT CURRENT, continuous
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, junction
NOTE: Refer to parent product data sheet PA241 for typical AC electrical characteristics, precautions,
applications and other test parameters.
350V
60mA
±16V
±V_S
150°C
DC WAFER PROBED SPECIFICATIONS
PARAMETER
TEST CONDITIONS¹
OFFSET VOLTAGE, initial
BIAS CURRENT, initial
COMMON MODE REJECTION
VOLTAGE SWING
SUPPLY CURRENT, quiescent
V_S = ±50V
V_CM = ±90 V DC
I_O = 40mA
V_S = ±50 V
MIN
84
±V_S–12
1.8
TYP
15
56
94
±V_S–10
2.1
MAX
40
200
2.3
UNITS
mV
pA
dB
V
mA
NOTES: 1. Unless otherwise stated V_S = ±50 V, T_A = 25°C, DC input specification ± value given.
2. Sample tested by wafer to 95%.
TYPICAL EXTERNAL CONNECTIONS
+V_S
R_F
R_I
V_IN
95
1
4
8
2
3
6_*
*
R_CL
R_L
–V_S ^CC
* Required component and value if given.
Optional balance components are recommended values.
C_C is NPO, rated for full supply voltage –V_S to +V_S.
NOTE: Diagram for connection illustration only.
All op amp configurations are possible.
Pad
Function
1
Output
2
Compensation
3
Compensation
4
Current Limit
Pad Function
5
+Vs
6
-Vs
8
+IN
9
-IN
CAUTION
The CPA241 is a MOSFET amplifier. ESD handling
procedures must be observed
DIE LAYOUT
4
5
6
3
7
12
2
8
10
1
9
11
Dimension: 154.5 x 117.5 ± 2.5 Mils.
Thickness: 15 Mil (380µ).
Backside Metal: None, Silicon.
Bond pad: 5 Mil sq (127µ) AI.
Make no connection to bond pads not listed by function.
Note: The backside of the CPA241 die is isolated up to
500V. The top side walls of the CPA241 die are isolated up
to 300V.
Ordering Information:
Order #: CPA241DI80:
Die are only available in waffle packages with a total of 80
die per package.
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Copyright © Cirrus Logic, Inc. 2009
(All Rights Reserved)
MAY 2009₁
APEX − CPA241UREVC