D20N10E Datasheet, PDF (2/6 Pages) Chongqing Pingwei Enterprise co.,Ltd – 20 Amps, 95Volts N-CHANNEL Power MOSFET

Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
95
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
－
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=90VGS=0V
－
IDSS
VDS=90VGS=0V（TJ =55℃） －
Gate-Body Leakage Current,Forward
IGSS
VGS=±20VDS=0V
－
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
2.0
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=5A
－
Dynamic Characteristics
Input Capacitance
Ciss
VDS=50V,VGS=0V,
－
Output Capacitance
Coss
f=1.0MHZ
－
Reverse Transfer Capacitance
Crss
－
Switching Characteristics
Turn-On Delay Time
td(on)
V DD =50V,I D =1A,
－
Turn-On Rise Time
Turn-Off Delay Time
tr
R G =6.8Ω,V GS =10V
－
td(off)
R L =25Ω, (Note4,5)
－
Turn-Off Fall Time
tf
－
Total Gate Charge
Qg
VDS=50V,ID=6A,
－
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
－
Gate-Drain Charge
Qgd
－
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
VG = VD= 0V, Force Current
－
Pulsed Diode Forward Current
ISM
－
Diode Forward Voltage
VSD
IS=1A,VGS=0V
－
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=25V,L=0.1mH,Rg=25Ω,IAS=20A , starling TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Typ Max Units
－
－
V
0.06 － V/℃
－
1
μA
－
5
μA
－ ±100 nA
－
4.0
V
5.2
7
mΩ
2020 －
pF
450 －
pF
260 －
pF
25
－
ns
18.5 －
ns
58
－
ns
75
－
ns
50
－
nC
13
－
nC
11
－
nC
－
20
A
－
80
A
－
1.0
V