D20N06E Datasheet, PDF (2/6 Pages) Chongqing Pingwei Enterprise co.,Ltd – 20 Amps,55 Volts N-CHANNEL Power MOSFET

Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
55
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
－
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=55VGS=0V
－
IDSS
VDS=55VGS=0V（TJ =55℃） －
Gate-Body Leakage Current,Forward
IGSS
VGS=±20VDS=0V
－
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
1
Drain-Source On-State Resistance
VGS=10V,ID=5A
－
RDS(on)
VGS=4.5V,ID=5A
－
Dynamic Characteristics
Input Capacitance
Ciss
VDS=30V,VGS=0V,
－
Output Capacitance
Coss
f=1.0MHZ
－
Reverse Transfer Capacitance
Crss
－
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=30V,RG=3Ω，
－
Turn-On Rise Time
Turn-Off Delay Time
tr
RL=1.5Ω
－
td(off)
VGS=10V (Note4,5)
－
Turn-Off Fall Time
tf
－
Total Gate Charge
Qg
VDS=30V,ID=20A,
－
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
－
Gate-Drain Charge
Qgd
－
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
VG = VD= 0V, Force Current
－
Pulsed Diode Forward Current
ISM
－
Diode Forward Voltage
VSD
IS=1A,VGS=0V
－
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=25V,L=0.1mH,Rg=25Ω,IAS=20A , starling TJ=25℃.
3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%.
4. Repetitive rating; pulse width limited by maximum junction temperature.
Typ Max Units
－
－
V
0.036 － V/℃
－
1
μA
－
5
μA
－ ±100 nA
－
3
V
11.5 15
mΩ
12.7 17
1340 －
pF
123 －
pF
10
－
pF
6
－
ns
2.5
－
ns
22
－
ns
2.5
－
ns
21
－
nC
4.7
－
nC
2.6
－
nC
－
20
A
－
80
A
－
1
V