12N65 Datasheet, PDF (2/2 Pages) Unisonic Technologies – 12A, 650V N-CHANNEL POWER MOSFET

Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
Breakdown Temperature Coefficient
ΔBVDSS Reference to 25℃，
/ΔTJ
ID=250uA
Zero Gate Voltage Drain Current
IDSS
VDS=650V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=30V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-30V,VDS=0V
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=6A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHZ
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=300V,ID=12A,
Turn-On Rise Time
tr
RG=4.7Ω
(Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS=480V,ID=12A,
Gate-Source Charge
Qgs
VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=12A,VGS=0V
Reverse Recovery Time
trr
VGS=0V,IS=12A,
Reverse Recovery Charge
Qrr
dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,starling,L=12mH,Rg=25Ω,IAS=12A , TJ=25℃.
3. ISD≤ID,dI/dt=_A/us,VDD≤BVDSS,starting TJ=25℃.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Mix Typ Max Units
650 －
－
V
－
0.6
－ V/℃
－
－
1
uA
－
－
100
nA
－
－ -100 nA
2
－
4
V
－
－
0.7
Ω
－
－ 1730 pF
－
－
180
pF
－
－
90
pF
－
20
－
ns
－
28
－
ns
－
55
－
ns
－
30
－
ns
－
58
－
nC
－
14
－
nC
－
32
－
nC
－
－
12
A
－
－
48
A
－
－
1.5
V
－ 600 －
ns
－
43
－
uC
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