RS501 Datasheet, PDF (1/1 Pages) GOOD-ARK Electronics – SINGLE-PHASE SILICON BRIDGE

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RS501 THRU RS507
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：5.0A
FEATURES
·Ideal for printed circuit board
·Surge overload ratings-150 Amperes
MECHANICAL DATA
·Case: plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: As marked
·Mounting position: Any
·Weight: 2.74 grams
RS-5
.855(21.7)
.825(21)
.188(4.8)x45°
+ AC -
.825(21.0)
.795(20.2)
.042(1.07) DIA.
.038((0.97) TYP.
1.0
(25.4)
MIN.
.265(6.7)
.245(6.2)
.400 .300 .300 .365
.385 .285 .285 .345
(10.2) (7.6) (7.6) (9.3)
(9.8) (7.2) (7.2) (8.8)
1.580(40.1)
1.550(39.4)
.195(5.0)
.180(4.6)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL RS501 RS502 RS503 RS504 RS505 RS506 RS507 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V_RRM 50 100 200 400 600 800 1000 V
V_RMS 46 88 140 280 420 560 700 V
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at T_A=75°C
I_o
5.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
method)
150
A
Maximum Forward Voltage Drop per element at
2.5A DC
V_F
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I²t Rating for Fusing (t<8.3ms)
@ T_A=25°C
I_R
@ T_A=100°C
I²t
10
µA
500
10
A²S
Typical Junction Capacitance (Note 1)
C_J
15
pF
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and form junction to leadmounted on P.C.B.with 0.47×0.47”(12×12mm ) copper pads
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