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RB151 Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes) | |||
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
RB151 THRU RB157
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGEï¼50-1000V
CURRENTï¼1.5A
FEATURES
·Surge overload ratings-50 Amperes
·Good for printed circuit board assembly
RB-15
.150(3.8) .360(9.1)
.130(3.3) .340(8.6)
.220(5.6)
.180(4.6)
MECHANICAL DATA
·Case: Plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: As marked
·Mounting position: Any
·Weight: 1.04 grams
1.2
(30.5)
MIN.
1.0
25.4
MIN.
.220(5.6)
.180(4.6)
.032(0.8)
.028(0.7)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25â ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL RB151 RB152 RB153 RB154 RB155 RB156 RB157 units
Maximum Recurrent Peak Reverse Voltage
VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at TA=25°C
Io
1.5
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
50
A
method)
Maximum Forward Voltage Drop per element at
1.0A DC
VF
1.0
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I2t Rating for Fusing (t﹤8.3ms)
@ TA=25°C
IR
@ TA=100°C
I2t
10
µA
500
10
A2S
Typical Junction Capacitance (Note 1)
CJ
Typical Thermal Resistance (Note 2)
RθJA
25
pF
40
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to lead mounted on P.C.B with 0.5Ã0.5â(13Ã13mm) copper pads
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