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PS20U45CT Datasheet, PDF (1/1 Pages) Chongqing Pingwei Enterprise co.,Ltd – 20A Schottky Barrier Rectifier
PS20U45(F,B,H)CT thru PS20U150(F,B,H)CT
20A Schottky Barrier Rectifier
FEATURE
 High current capability
 Ultra low forward voltage drop
 Low power loss, high efficiency
 High surge capability
 High ESD capability
 High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MECHANICAL DATA
 Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
 Mounting position: any
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
TO-220AB
PS20UXXCT
TO-263
PS20UXXBCT
ITO-220AB
PS20UXXFCT
TO-262
PS20UXXHCT
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
PS20U45 PS20U60 PS20U100 PS20U120 PS20U150
Symbol
CT
CT
CT
CT
CT units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified total device
Current at TC=90°C
per diode
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
Storage Temperature Range
Operation Temperature Range
ELECTRONICAL CHARACTERISTICS
VRRM
VRMS
VDC
IF(AV)
IFSM
CJ
TSTG
TJ
45
60
32
42
45
60
460
100
120
70
84
100
120
20.0
10.0
150
300
-55 to +150
-55 to +150
150
V
105
V
150
V
A
A
pF
°C
°C
Parameter
PS20U45 PS20U60 PS20U100 PS20U120 PS20U150
Symbol
CT
CT
CT
CT
CT units
Maximum Forward Voltage Drop per diode at 10A (Note 2)
VF
Maximum DC Reverse Current at rated @ TC =25°C
DC blocking voltage (Note 2)
@ TC=100°C
IR
THERMAL CHARACTERISTICS
0.55
0.60
0.72
0.82
0.90
V
0.25
50.0
0.1
30.0
mA
Parameter
Symbol
ITO-220
TO-220
TO-262
TO-263
units
Typical Thermal Resistance (Note 3)
Rth (JC)
3.0
2.0
2.0
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
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