MUR2020CT Datasheet, PDF (1/1 Pages) International Rectifier – Ultrafast Rectifier

MBR2020(F,B,H)CT thru MBR20200(F,B,H)CT
20A Schottky Barrier Rectifier
FEATURE
 High current capability
 Low forward voltage drop
 Low power loss, high efficiency
 High surge capability
 High ESD capability
 High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MECHANICAL DATA
 Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
 Mounting position: any
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
TO-220AB
MBR20XXCT
TO-263
MBR20XXBCT
ITO-220AB
MBR20XXFCT
TO-262
MBR20XXHCT
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
MBR MBR MBR MBR MBR MBR
Symbol _{2020CT 2045CT 2060CT 20100CT 20150CT 20200CT} units
Maximum Recurrent Peak Reverse Voltage
VRRM
20
45
60
100 150 200 V
Maximum RMS Voltage
VRMS
14
32
42
70
105 140 V
Maximum DC Blocking Voltage
VDC
20
45
60
100 150 200 V
Maximum Average Forward Rectified
Current at TC=90°C
total device
per diode
IF(AV)
20.0
10.0
A
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
IFSM
175
A
Junction Capacitance (Note1)
CJ
700
300
pF
Storage Temperature Range
TSTG
-55 to +150
°C
Operation Temperature Range
TJ
-55 to +150
°C
ELECTRONICAL CHARACTERISTICS
Parameter
MBR MBR MBR MBR MBR MBR
Symbol _{2020CT 2045CT 2060CT 20100CT 20150CT 20200CT} units
Maximum Forward Voltage Drop per diode at 10A (Note 2)
VF
Maximum DC Reverse Current at rated @ TC =25°C
DC blocking voltage (Note 2)
@ TC=100°C
IR
THERMAL CHARACTERISTICS
0.55 0.60 0.70 0.85 0.90 0.95 V
0.15
40.0
0.1
20.0
mA
Parameter
Symbol
ITO-220
TO-220
TO-262
TO-263
units
Typical Thermal Resistance (Note 3)
Rth (JC)
3.0
2.0
2.0
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
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