MBR1620CT Datasheet, PDF (1/1 Pages) Micro Commercial Components – 16 Amp Schott ky Barr ier Rectifier 20 to 60 Volts

MBR1620(F,B,H,G,D)CT thru MBR16200(F,B,H,G,D)CT
16A Schottky Barrier Rectifier
FEATURE
 High current capability
 Low forward voltage drop
 Low power loss, high efficiency
 High surge capability
 High ESD capability
 High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MECHANICAL DATA
 Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
 Mounting position: any
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
TO-220AB
MBR16XXCT
TO-263
MBR16XXBCT
ITO-220AB
MBR16XXFCT
TO-252
MBR16XXGCT
TO-262
MBR16XXHCT
TO-251
MBR16XXDCT
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
MBR MBR MBR MBR MBR MBR
Symbol _{1620CT 1645CT 1660CT 16100CT 16150CT 16200CT} units
Maximum Recurrent Peak Reverse Voltage
VRRM
20
45
60
100 150 200 V
Maximum RMS Voltage
VRMS
14
32
42
70
105 140 V
Maximum DC Blocking Voltage
VDC
20
45
60
100 150 200 V
Maximum Average Forward Rectified
Current at TC=90°C
total device
per diode
IF(AV)
16.0
8.0
A
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
IFSM
150
A
Junction Capacitance (Note1)
CJ
600
250
pF
Storage Temperature Range
TSTG
-55 to +150
°C
Operation Temperature Range
TJ
-55 to +150
°C
ELECTRONICAL CHARACTERISTICS
Parameter
MBR MBR MBR MBR MBR MBR
Symbol _{1620CT 1645CT 1660CT 16100CT 16150CT 16200CT} units
Maximum Forward Voltage Drop per diode at 8A (Note 2)
VF
0.55 0.60 0.70 0.85 0.90 0.95 V
Maximum DC Reverse Current at rated @ TC =25°C
DC blocking voltage (Note 2)
@ TC=100°C
IR
0.15
40.0
0.1
20.0
mA
THERMAL CHARACTERISTICS
Parameter
Symbol ITO-220
TO-220
TO-262
TO-263
TO-251
TO-252
units
Typical Thermal Resistance (Note 3)
Rth (JC)
3.2
2.2
2.2
6.2
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
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