MBR1060CT Datasheet, PDF (1/1 Pages) Kersemi Electronic Co., Ltd. – Metal of siliconrectifier, majonty carrier conducton

MBR1045L(F,B,H)CT thru MBR10200L(F,B,H)CT
10A Schottky Barrier Rectifier
FEATURE
 High current capability
 Low forward voltage drop
 Low power loss, high efficiency
 High surge capability
 High ESD capability
 High temperature soldering guaranteed:
260°C/10s/0.25"(6.35mm) from case
MECHANICAL DATA
 Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
 Mounting position: any
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
TO-220AB
MBR10XXLCT
TO-263
MBR10XXLBCT
ITO-220AB
MBR10XXLFCT
TO-262
MBR10XXLHCT
Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
MBR1045 MBR1060 MBR10100 MBR10150 MBR10200
Symbol _LCT
LCT
LCT
LCT
LCT ^units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified total device
Current at TC=90°C
per diode
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
Storage Temperature Range
Operation Temperature Range
ELECTRONICAL CHARACTERISTICS
VRRM
VRMS
VDC
IF(AV)
IFSM
CJ
TSTG
TJ
45
60
32
42
700
100
150
70
105
10.0
5.0
120
300
-55 to +150
-55 to +150
200
V
140
V
V
A
A
pF
°C
°C
Parameter
Symbol
MBR1045
LCT
MBR1060
LCT
MBR10100 MBR10150 MBR10200
LCT
LCT
LCT
units
Maximum Forward Voltage Drop per diode at 5A (Note 2) VF
0.55
0.65
0.80
0.85
0.90
V
Maximum DC Reverse Current at rated @ TC =25°C
DC blocking voltage (Note 2)
@ TC=100°C
IR
0.15
40.0
0.1
20.0
mA
THERMAL CHARACTERISTICS
Parameter
Symbol
ITO-220
TO-220
TO-262
TO-263
units
Typical Thermal Resistance (Note 3)
Rth (JC)
3.5
2.5
2.5
°C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
- 页码 -
Rev. 14-1
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