KBU8A-RS801 Datasheet, PDF (1/1 Pages) Chongqing Pingwei Enterprise co.,Ltd – SINGLE-PHASE SILICON BRIDGE RECTIFIER

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
KBU8A/RS801 THRU KBU8M/RS807
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：8.0A
FEATURES
·Low leakage
·Low forward voltage
·Surge overload ratings-250 Amperes
·Molded structure
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting position: Any
·Weight: 8.0 grams
KBU
.935(23.7)
.895(22.7)
.700(17.8)
.600(16.8)
- AC +
.300
(7.5)
.780(19.8)
.740(18.8)
1.00
(25.4)
MIN.
.052(1.3) DIA.
.048(1.2) TYP.
.140
(5.3)
.220(5.6)
.180(4.6)
SPACING
.280(7.0)
.268(6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
RS801 RS802 RS803 RS804 RS805 RS806 RS807
SYMBOL
units
KBU8A KBU8B KBU8D KBU8G KBU8J KBU8K KBU8M
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V_RRM 50 100 200 400 600 800 1000 V
V_RMS 35 70 140 280 420 560 700 V
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at T_C=75°C
I_o
8.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
method)
250
A
Maximum Forward Voltage Drop per element at
4.0A DC
V_F
1.0
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I²t Rating for Fusing (t<8.3ms)
@ T_A=25°C
I_R
@ T_A=100°C
I²t
10
µA
500
127
A²S_ec
Typical Junction Capacitance (Note 1)
C_J
Typical Thermal Resistance (Note 2)
R_θJA
186
pF
10
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47”(12×12mm) copper pads
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