KBU10A Datasheet, PDF (1/1 Pages) Dc Components – TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
KBU10A THRU KBU10M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：10.0A
FEATURES
·Low leakage
·Low forward voltage
·Surge overload ratings-250 Amperes
·Molded structure
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting position: Any
·Weight: 8.0 grams
KBU
.935(23.7)
.895(22.7)
.700(17.8)
.600(16.8)
- AC +
.300
(7.5)
.780(19.8)
.740(18.8)
1.00
(25.4)
MIN.
.052(1.3) DIA.
.048(1.2) TYP.
.140
(5.3)
.220(5.6)
.180(4.6)
SPACING
.280(7.0)
.268(6.8)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL KBU10A KBU10B KBU10D KBU10G KBU10J KBU10K KBU10M units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V_RRM 50 100 200 400 600 800 1000 V
V_RMS 35 70 140 280 420 560 700 V
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at T_C=75°C
I_o
10.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
method)
250
A
Maximum Forward Voltage Drop per element at
5.0A DC
V_F
1.0
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I²t Rating for Fusing (t<8.3ms)
@ T_A=25°C
I_R
@ T_A=100°C
I²t
Typical Junction Capacitance (Note 1)
C_J
Typical Thermal Resistance (Note 2)
R_θJA
10
µA
500
127
A²S_ec
186
pF
10
°C/W
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambientwith units mounted on 0.47×0.47”(12×12mm) copper pads
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www^１.fineprint.cn