GBU8005 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 8.0A GLASS PASSIVATED BRIDGE RECTIFIER

GBU8005 THRU GBU810
SINGLE PHASE8.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
.UL Listed Under Recognized Component Index,
File Number E338195
.906(23.0)
.827(21.0)
GBU
.130(3.2)
45°C ham fer
.Glass passivated chip junctions
.High case dielectric stength
.Low Reverse Leakage Current
.High surge current capability
.Ideal for Printed Circuit Board Applications
.228(5.8)
.213(5.4)
.150(3.8)
.142(3.6)
- ^{AC +}
.748(19.0)
.709(18.0)
MECHANICAL DATA
.Case: GBU
.Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
.098(2.5)
.087(2.2)
.087(2.2)
.071(1.8)
.748(19.0)
.669(17.0)
.Terminals: Pure tin plated, Lead free.
Leads solderable per MIL-STD-750, Method 2026.
.Polarity: Molded on Body
.Mounting: Through Hole for #6 Screw
.Mounting Torque: 5.0 in-lbs Maximum
.Weight: 3.8 grams
.087(2.2)
.071(1.8)
.210(5.3)_{SPAC IN G}
.190(4.8)
.049(1.25)
.045(1.15)
- ^~~
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
.138(3.5)
.130(3.3)
.098(2.5)
.091(2.3)
.024(0.6)
.020(0.5)
+
Type Number
SYM GBU GBU GBU GBU GBU GBU GBU
units
BOL 8005 801 802 804 806 808 810
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
VRRM 50 100 200 400 600 800 1000
V
VRMS 35
70 140 280 420 560 700
V
VDC
50 100 200 400 600 800 1000
V
Maximum Average Forward (with heatsink Note2)
8.0
Rectified Current @ TC=100°C(without heatsink)
IF(AV)
2.8
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
IFSM
200
A
method)
Maximum Forward Voltage
@ 8.0A DC
1.1
Drop per element
@ 4.0A DC
VF
1.0
V
Maximum DC Reverse Current @TJ =25°C
at rated DC blocking voltage
@TJ =125°C
IR
I²t Rating for Fusing (t﹤8.3ms)
I²t
5.0
500.0
166
μA
A²Sec
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
Operating Junction Temperature
CJ
R(JC)
TSTG
TJ
60
2.2
-55 to +150
-55 to +150
pF
°C/W
°C
°C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
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