English
Language : 

GBJ801 Datasheet, PDF (1/2 Pages) UNIOHM CORPORATION – SINGLE PHASE 8.0 AMP BRIDGE RECTIFIERS
GBJ8005 THRU GBJ810
SINGLE PHASE8.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS
FEATURE
GBJ
.UL Listed Under Recognized Component Index,
File Number E338195
.Glass passivated chip junctions
1.193(30.3)
HOLE FOR NO.
1.169(29.7)
6 SCREW
.189(4.8)
.177(4.5)
.High case dielectric stength
.Low Reverse Leakage Current
.High surge current capability
.Ideal for Printed Circuit Board Applications
MECHANICAL DATA
.Case: GBJ
.Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
.Terminals: Pure tin plated, Lead free.
Leads solderable per MIL-STD-750, Method 2026.
.Polarity: Molded on Body
.119
(0.5)
+ .106(2.7) ~ ~ -
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.165(4.2)
.150(3.8)
.035(0.9)
.433(11)
.354(9.0)
.303(7.7)
.303(7.7) .287(7.3)
.287(7.3)
.800(20.3)
.776(19.7)
.441(11.2)
.425(10.8)
.708(18.0)
.669(17.0)
+ ~~ -
.Mounting: Through Hole for #6 Screw
.Mounting Torque: 5.0 in-lbs Maximum
.Weight:6.6grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
.150(3.8)
.138(3.5)
.184(3.4)
.122(3.1)
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward (with heatsink Note2)
Rectified Current @ TC=110°C(without heatsink)
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
SYM
BOL
VRRM
VRMS
VDC
IF(AV)
GBJ
8005
50
35
50
GBJ
801
100
70
100
GBJ
802
200
140
200
GBJ
804
400
280
400
8.0
2.9
GBJ
806
600
420
600
GBJ
808
800
560
800
GBJ
810
1000
700
1000
units
V
V
V
A
IFSM
200
A
Maximum Forward Voltage @ 8.0A DC
1.1
Drop per element
@ 4.0A DC
VF
1.0
V
Maximum DC Reverse Current @TJ =25°C
at rated DC blocking voltage @TJ =125°C
I2t Rating for Fusing (t﹤8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
Operating Junction Temperature
Note:
IR
I2t
CJ
R(JC)
TSTG
TJ
5.0
500.0
166
60
2.0
-55 to +150
-55 to +150
μA
A2Sec
pF
°C/W
°C
°C
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.
- 39 -