BR805 Datasheet, PDF (1/1 Pages) Rectron Semiconductor – SINGLE-PHASE SILICON BRIDGE RECTIFIER

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BR805 THRU BR810
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE：50-1000V
CURRENT：8.0A
FEATURES
·Surge overload ratings-125 Amperes
·Low forward voltage drop
MECHANICAL DATA
·Case:Metal or plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting: Thru hole for 6# screw
·Weight: 6.9 grams
KBPC-8/10
.052(1.3) DIA.
.048(1.2) TYP.
.296(7.5)
.255(6.5)
.750
(19.1)
MIN.
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
HOLE FOR
NO. 6 SCREW
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR805 BR81 BR82 BR84 BR86 BR88 BR810 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V_RRM 50 100 200 400 600 800 1000 V
V_RMS 35 70 140 280 420 560 700 V
V_DC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at T_C=75°C
I_o
8.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
method)
250
A
Maximum Forward Voltage Drop per element at
4.0A DC
V_F
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I²t Rating for Fusing (t<8.3ms)
@ T_A=25°C
I_R
@ T_A=100°C
I²t
10
µA
500
166
A²S_ec
Typical Junction Capacitance (Note 1)
C_J
200
pF
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with
0.5×0.5”(13×13mm) copper pads.
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