8N10P Datasheet, PDF (1/7 Pages) Chongqing Pingwei Enterprise co.,Ltd – 8 Amps,100 Volts N-CHANNEL Power MOSFET

8N10P
8 Amps,100 Volts N-CHANNEL Power MOSFET
FEATURE
 8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
APPLICATION
 High Frequency Piont-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
 Networking DC-DC Power System
 LCD/LED back light
GENERAL DESCRIPTION
SOP8L PIN CONFIGURATION
The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and
gate charge for most of the synchronous buck converter applications.
The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Channel Temperature
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAS
dv/dt
TJ,TSTG
TCH
TL
8N10P
100
±20
8
32
11
15
5.5
-55 to +150
150
260
UNIT
V
A
mJ
A
V/ns
℃
℃
℃
Thermal Characteristics
Parameter
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Symbol
Rth(ch-c)
Rth(ch-a)
PD
MAX
16
59
3.1
Units
℃/W
℃/W
W