4N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 4 Amps, 600 Volts N-CHANNEL POWER MOSFET

4N60(F,B,H,G,D)
4A mps,600 Volts N-CHANNEL MOSFET
FEATURE
 4A,600V,RDS(ON)=2Ω@VGS=10V/2A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
TO-220AB
4N60
ITO-220AB
4N60F
TO-262
4N60H
TO-263
4N60B
TO-252
4N60G
TO-251
4N60D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
4N60
600
±30
4
16
300
4
30
4.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25℃
Symbol
RthJC
PD
ITO-220
2.2
57
TO-220
1.8
70
TO-262
TO-263
1.8
70
TO-251
TO-252
5.7
22
Units
℃/W
W
- 页码 -
Rev. 14-1
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