2N60 Datasheet, PDF (1/2 Pages) Unisonic Technologies – 2 Amps, 600 Volts N-CHANNEL MOSFET

2N60(F,B,H,G,D)
2A mps,600 Volts N-CHANNEL MOSFET
FEATURE
 2A,600V,RDS(ON)=4Ω@VGS=10V/1A
 Low gate charge
 Low Ciss
 Fast switching
 100% avalanche tested
 Improved dv/dt capability
TO-220AB
2N60
ITO-220AB
2N60F
TO-262
2N60H
TO-263
2N60B
TO-252
2N60G
TO-251
2N60D
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note1)
Single Pulse Avalanche Energy (Note 2)
Avalanche Current(Note1)
Repetitive Avalanche Energy (Note1)
Reverse Diode dV/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
TJ,TSTG
TL
Mounting Torque
6-32 or M3 screw
2N60
600
±30
2
8
120
2.0
5.4
4.5
-55 to +150
260
10
1.1
UNIT
V
A
mJ
A
mJ
V/ns
℃
℃
lbf·in
N·m
Thermal Characteristics
Parameter
Maximum Junction-to-Case
Maximum Power Dissipation
TC=25℃
Symbol
RthJC
PD
ITO-220
4
32
TO-220
2
62
TO-262
TO-263
2
62
TO-251
TO-252
6
21
Units
℃/W
W
- 页码 -
Rev. 14-1
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