1N5400_16 Datasheet, PDF (1/1 Pages) Taiwan Memory Technology – 3A, 50V - 1000V Silicon Rectifiers

1N5400 THRU 1N5408
FEATURE
3.0AMPS . SILICON RECTIFIERS
DO-27/DO-201AD
.High current capability
.Low forward voltage drop
.Low power loss, high efficiency
.High surge capability
0.96(24.4)
M IN.
.220(5.6) _{D IA.}
.187(5.0)
.High temperature soldering guaranteed:
260°C /10sec/ 0.375" lead length at 5 lbs tension
MECHANICAL DATA
.Terminal: Plated axial leads solderable per
+
.375(9.5)
.335(8.5)
-
MIL-STD 202E, method 208C
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Polarity: color band denotes cathode
.Mounting position: any
0.96(24.4)
M IN.
.051(1.3) _{D IA.}
.043(1.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 units
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400 600 800
Maximum RMS Voltage
VRMS
35
70 140 280 420 560
Maximum DC blocking Voltage
VDC
50 100 200 400 600 800
Maximum Average Forward Rectified Current
IF(AV)
3.0
.375"(9.5mm) lead length at TA =55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC IFSM
90.0
method)
Maximum Forward Voltage at 3.0A DC
VF
1.0
Maximum DC Reverse Current @TA =25°C
IR
at rated DC blocking voltage @TA =100°C
5.0
100.0
Typical Junction Capacitance (Note 1)
CJ
50
Typical Thermal Resistance (Note 2)
Storage Temperature
R(JA)
TSTG
50
-55 to +150
Operation Junction Temperature
TJ
-55 to +150
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C. Board Mounted.
1000 V
700
V
1000 V
A
A
V
µA
pF
°C/W
°C
°C
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