1N4150 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes"

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4150 THRU 1N4448
HIGH SPEED SWITCHING DIODES
VOLTAGE：50-100V
CURRENT：0.15 to 0.2 A
FEATURES
·Silicon epitaxial planar diodes
·Low power loss, high efficiency
·Low lekage
·Low forward voltagh
·High speed switching
·High current capability
·High reliability
MECHANICAL DATA
·Case:Glass sealed case
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Color band denotes cathode end
·Mounting position: Any
·Weight: 0.13 gram
DO-35
25.0MIN. _0.52
L
25.0MIN.
2.0MAX.
L:
DO-34
2.9
DO-35
4.2
MAX. MAX.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1N4150
1N4151
1N4448
Maximum Recurrent Peak Reverse Voltage
Maximum power dissipation tamb=25°C
Maximum Forward Voltage
Maximum reverse current
Maximum reverse recovery time
Maximum junction capacitance
V_RRM
P_tot
V_F
I_R
t_rr
C_J
50
500
1.0/200
100/50
4.0
75
500
1.0/50
50/50
2.0
4.0
100
500
1.0/100
5000/75
4.0
units
V
mW
V/mA
nA/V
nS
pF
Notes:
1-1N914A,1N914B is same as 1N914, except different forward voltage|:
1N914A-1.0/20 V/mA
1N914B-1.0/100 V/mA
2.Suffix “M” stands for “DO-34” package. (e.g.:1N4148M)
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