1N4001S_16 Datasheet, PDF (1/1 Pages) Taiwan Memory Technology – 1A, 50V - 1000V Silicon Rectifiers

1N4001S THRU 1N4007S
1.0AMP . SILICON RECTIFIERS
FEATURE
A-405
.High current capability
.Low forward voltage drop
.Low power loss, high efficiency
.High surge capability
.High temperature soldering guaranteed
260°C /10sec/ 0.375" lead length at 5 lbs tension
.Φ0.6mm leads
MECHANICAL DATA
.551(14.0)
M IN.
.205(5.2)
.166(4.2)
.107(2.7) _{D IA.}
.080(2.0)
+
-
.Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
.551(14.0)
M IN.
.030(0.75) _{D IA.}
.021(0.53)
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Polarity: color band denotes cathode
.Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
1N
1N
1N
1N
1N
1N
1N
SYMBOL
4001S 4002S 4003S 4004S 4005S 4006S 4007S
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100 200 400 600 800 1000
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700
Maximum DC blocking Voltage
VDC
50
100 200 400 600 800 1000
Maximum Average Forward Rectified Current
IF(AV)
1.0
.375"(9.5mm) lead length at TA =55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC IFSM
30.0
method)
Maximum Forward Voltage at 1.0A DC
VF
1.0
Maximum Forward Voltage at 3.0A DC
VF
1.3
Maximum DC Reverse Current @TA =25°C
IR
at rated DC blocking voltage @TA =100°C
5.0
100.0
Typical Junction Capacitance (Note 1)
CJ
15
Typical Thermal Resistance (Note 2)
R(JA)
75
Storage Temperature
TSTG
-55 to +150
Operation Junction Temperature
TJ
-55 to +150
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C. Board Mounted.
units
V
V
V
A
A
V
V
µA
pF
°C/W
°C
°C
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