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1N4001G Datasheet, PDF (1/1 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction) | |||
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CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001G THRU 1N4007G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGEï¼50-1000V
CURRENTï¼1.0A
FEATURES
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.33 grams
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA.
.107(2.7)
.080(2.0)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25â ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1N4001G1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007Gunits
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Current
at TA=75°C
Io
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
30
A
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
VF
Maximum DC Reverse Current
@ TA=25°C
at Rated DC Blocking Voltage
@ TA=100°C IR
Maximum Full Load Reverse Current Average
Full Cycle .375â(9.5mm) lead length at TL=75°C
Typical Junction Capacitance (Note)
CJ
Typical Thermal Resistance
RθJA
1.1
V
5.0
500
µA
30
15
pF
50
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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