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1A1 Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – MINIATURE PLASTIC SILICON RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1A1 THRU 1A7
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.0A
FEATURES
·High reliability
·Low leakage
·Low forward voltage drop
·High current capability
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
·Weight: 0.19 grams
R-1
.787(20.0)
MIN.
.138(3.5)
.114(2.9)
.787(20.0)
MIN.
.025(0.65)
.021(0.55)
DIA.
.102(2.6)
.087(2.2)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1A1 1A2 1A3 1A4 1A5 1A6 1A7 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Current
at TA=25°C
Io
1.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
25
A
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
VF
Maximum DC Reverse Current
@ TA=25°C
at Rated DC Blocking Voltage
@ TA=100°C IR
Maximum Full Load Reverse Current Average
Full Cycle .375”(9.5mm) lead length at TL=75°C
Typical Junction Capacitance (Note)
CJ
Typical Thermal Resistance
RθJA
1.1
V
5.0
500
µA
30
15
pF
60
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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