SD101AW Datasheet, PDF (1/1 Pages) Diodes Incorporated – SCHOTTKY BARRIER SWITCHING DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
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SD101AW
THRU
SD101CW
Features
l For general purpose applications
l The SD101AW to SD101CW series is a Metal-on-silicon
Schottky barrier device which is protected by a PN junction
Guard ring.
l Low Forward Voltage Drop
Mechanical Data
l Case: SOD-123 plastic case
l Terminals: Solderable per MIL-STD-750, Method 2026
l Polarity: Indicated by Cathode Band
Small Signal
Schottky Diodes


A
B
C
Maximum Ratings @ 25^OC Unless Otherwise Specified
E
Characteristic
Symbol SD101AW SD101BW SD101CW
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage
VRWM
60V
50V
40V
DC Blocking Voltage
VR
Maximum sigle cycle surge 10us
square wave
IFSM
2.0A
Power Dissipation(Note 1)
Pd
Thermal Resistance, Junction to
Ambient
R
Junction Tmperature
Tj
Operation/Storage Temp. Range TSTG
400mW
300K/W
125^OC
-55 to +150^OC
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Charateristic
Leakage Current
Symbol Max
SD101AW
200nA
SD101BW IR
SD101CW
200nA
200nA
Test Condition
VR=50V
VR=40V
VR=30V
Maximum Forward
Voltage Drop
SD101AW
SD101BW
SD101CW
SD101AW
VF
SD101BW
SD101CW
0.41V
0.4V
.39V
1V
0.95V
0.9V
IF=1mA
IF=15mA
Junction Cap.
SD101AW
SD101BW Cj
SD101CW
2.0pF
2.1pF VR=0V, f=1.0MHz
2.2pF
Reverse Recovery Time
tr r
IF=IR=5mA, recover
1ns _{to 0.1I R}
Note: 1. Valid provided that electrodes are kept at
ambient temperature
H
DIM
A
B
C
D
E
G
H
J
D
G
J
INCHES
MIN MAX
.140 .152
.100 .112
.055 .071
----- .053
.012 .031
.006 -----
-----
.01
----- .006
MM
MIN MAX
3.55 3.85
2.55 2.85
1.40 1.80
----- 1.35
0.30
.78
0.15 -----
-----
.25
-----
.15
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.093
0.048”
0.036”
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