SD101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diodes for general purpose applications

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SD101A
THRU
SD101C
Features
l Low Reverse Recovery Time
l Low Reverse Capacitance
l Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Mechanical Data
l Case: DO-35, Glass
l Terminals: Solderable per MIL-STD-202, Method 208
l Polarity: Indicated by Cathode Band
Small Signal
Schottky Diodes
DO-35
Maximum Ratings @ 25^oC Unless Otherwise Specified
Characteristic
Symbol SD101A SD101B SD101C
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM
60V
50V
40V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
42V
35V
28V
Maximum sigle cycle surge 10us
square wave
IFSM
2.0A
Power Dissipation(Note 1)
Pd
Thermal Resistance, Junction to
Ambient
R
Junction Tmperature
Tj
Operation/Storage Temp. Range TSTG
400mW
300K/W
125^oC
-55 to +150^oC
Electrical Characteristics @ 25^oC Unless Otherwise Specified
D
A
Cathode
Mark
B
D
C
Charateristic
Symbol
Leakage Current SD101A
SD101B IR
SD101C
Max
200nA
200nA
200nA
Test Condition
VR=50V
VR=40V
VR=30V
Maximum Forward SD101A
Voltage Drop SD101B
SD101C
SD101A
VF
SD101B
SD101C
0.41V
0.4V
0.39V
1V
0.95V
0.9V
IF=1mA
IF=15mA
Junction Cap. SD101A
SD101B Cj
SD101C
2.0pF
2.1pF VR=0V, f=1.0MHz
2.2pF
Reverse Recovery Time
tr r
IF=IR=50mA, recover to
1ns _{200mA/0.1I R}
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
Note: 1. Valid provided that electrodes are kept at ambient temperature
NOTE
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