LLSD101A Datasheet, PDF (1/2 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE

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LLSD101A
THRU
LLSD101C
Features
l Low Reverse Recovery Time
l Low Reverse Capacitance
l Low Forward Voltage Drop
l Guard Ring Construction for Transient Protection
Schottky Barrier
Switching Diode
Mechanical Data
l Case: MiniMELF, Glass
l Terminals: Solderable per MIL -STD -202, Method 208
l Polarity: Indicated by Cathode Band
l Weight: 0.05 grams ( approx.)
MINIMELF
Cathode Mark
Maximum Ratings @ 25^oC Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol LLSD101A LLSD101B LLSD101C
VRRM
VRWM
60V
50V
40V
VR
VR(RMS)
42V
35V
28V
Forward Continuous Current(Note 1) IFM
15mA
Non-Repetitive Peak @ t<=1.0s
Forward Surge Current @ t=10us
IFSM
50mA
2.0A
Power Dissipation(Note 1)
Pd
400mW
Thermal Resistance(Note 1)
R
375K/W
Operation & Storage Temp. Range Tj, TSTG
-55 to 150^oC
Electrical Characteristics @ 25^oC Unless Otherwise Specified
C
B
A
DIMENSION
DIM
INCHES
MM
NOTE
MIN MAX MIN MAX
A .134 .142 3.40 3.60
B
.008 .016
.20
.40
C .055 .059 1.40 1.50
Charateristic
Symbol Min
Peak
LLSD101A
Reverse LLSD101B IRM -----
Current LLSD101C
LLSD101A
LLSD101B
Forward LLSD101C V_FM
Volt. Drop LLSD101A
-----
LLSD101B
LLSD101C
Junction
LLSD101A
Capacitance LLSD101B Cj
-----
LLSD101C
Reverse Recovery Time
trr _-----
Max
200
0.41
0.40
0.39
1.00
0.95
0.90
2.0
2.1
2.2
1.0
Unit Test Cond.
V_R=50V
nA VR=40V
VR=30V
I F=1.0mA
I F=1.0mA
V I _F=1.0mA
I F= 1 5 m A
I F= 1 5 m A
I F= 1 5 m A
pF VR=0V, f=1.0MHz
I F= IR =5mA,
ns _{recover to 0.1 I R}
Note: 1. Valid provided that electrodes are kept at ambient temperature
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
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