LL4151 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the DO-35 case with the type
designation 1N4151
MECHANICAL DATA
. Case: MinMelf glass case(SOD- 80)
. Weight: Approx. 0.05gram
LL4151
SMALL SIGNAL SWITCHING DIODE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Reverse voltage
VR
50
Peak reverse voltage
VRM
75
Average rectified current, Half wave rectification with
IAV
1501)
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25
IFSM
500
Power dissipation at TA=25
Ptot
5001)
Junction temperature
Storage temperature range
TJ
TSTG
175
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Units
Volts
Volts
mA
mA
mW
Forward voltage
Leakage current at VR=50V
Symbols
Min.
VF
IR
Typ.
Max.
1
50
Units
Volts
nA
at VR=20V, TJ=150
IR
Junction capacitance at VR=VF=0V
CJ
75
Reverse breakdown voltage tested with 5 A
V(BR)R
Reverse recovery time from IF=10mA to IR=1mA,
trr
from IF=10mA to IR=1mA VR=6V, RL=100
trr
Thermal resistance junction to ambient
R JA
Rectification efficience at f=100MHz,VRF=2V
0.45
1)Valid provided that leads at a d_Cist_oa_pn_yc_re_igo_hf_t 8_@mm₂₀f₀ro₀m_SHca_As_Ne_Ga_Hre_Ak_Ie_Cp_Ht a_Et_Na_Ym_Ib_Eie_Ln_Et_Cte_Tm_Rp_Oe_Nra_ICtu_Sre_C(D_OO_.,-_L3_T5_D)
50
A
2
pF
V
4
ns
2
ns
3501)
K/W
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