DL5711 Datasheet, PDF (1/2 Pages) Micro Commercial Components – Schottky Barrier Switching Diode

Shanghai Lunsure Electronic
Technology Co.,Ltd
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DL5711
DL6263
Features
• For general purpose applications
• These diodes are also available in the DO-35 case with type
designation 1N5711 and 1N6263, in the Micro-MELF case with type
designation MCL5711 and MCL6263.
Maximum Ratings
Repetitive Peak Reverse
Voltage
DL5711 ^VR
70V
DL6263
60V
Maximum Forward
Surge Current
I_FSM
2.0A
tp<10uS,
T_A=25^OC
Power Dissipation
Junction Temperature
Storage Temperature
Range
PTOT
T_J
T_STG
400mW*
125^OC
-55~+150^OC
* Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics @ 25°C Unless Otherwise Specified
Maximum Forward Voltage
V_F
Minimum Reverse
Breakdown voltage
DL5711
V_R
DL6263
Maximum Leakage current
I_R
Maximum Junction
Capacitance
C_J
Maximum Reverse recovery
time
t_rr
Maximum Thermal
resistance junction to
RθJA
Ambient Air
0.41V
1.0V
I_F = 1.0mA
I_F = 15mA
70V
60V
200nA
2.0pF
1.0ns
V_R=50V
V_R=0, f=1MHz
I_F=5.0mA ,
I_R=5.0mA ,
0.3K/ W
Small Signal
Schottky Diodes
MINIMELF
Cathode Mark
C
B
A
DIMENSION
DIM
INCHES
MM
NOTE
MIN MAX MIN MAX
A
.134 .142 3.40
3.60
B .008 .016 0.20 0.40
C .055 .059 1.40 1.50
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
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