DL4448 Datasheet, PDF (1/3 Pages) Micro Commercial Components – 500mW 100Volt Switching Diode

Shanghai Lunsure Electronic
Technology Co.,Ltd
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DL4448
Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
500mW 100Volt
Switching Diode
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35 °C/W Junction To Ambient
MINIMELF
Cathode Mark
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
V_R
75V
V_RM
100V
Average Rectified
Current
I_O
150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
P_TOT
T_J
500mW
150°C
Peak Forward Surge
I_FSM
Current
500mA t<1s
Instantaneous
Forward Voltage
V_F
1.0V(MAX) I_FM = 100mA;
0.62-0.72V I_FM = 5.0mA
Maximum DC
25nA VR=20Volts
Reverse Current At
I_R
5.0uA T_J=25°C V_R=75V
Rated DC Blocking
50µA T_J=150°C V_R=20V
Voltage
Typical Junction
C_J
4pF Measured at
Capacitance
1.0MHz, V_R=4.0V
Reverse Recovery
T_rr
4nS I_F=10mA
Time
V_R = 6V
R_L=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
C
B
A
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.134
.142
B
.008
.016
C
.055
.059
MM
MIN
3.40
.20
1.40
MAX
3.60
.40
1.50
NOTE
∅
SUGGESTED SOLDER
PAD LAYOUT
0.105
0.075”
0.030”
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