BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

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BAV70
Features
• Low Current Leakage
• Low Cost
• Small Outline Surface Mount Package
Pin Configuration
Top View
A4
C
A
A
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 357Κ/W Junction To Ambient
350mW 75 Volt Dual
Switching Diode
SOT-23
A
D
CB
F
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Average Rectified
Output Current
V_R
75V
I_O
150mA
Power Dissipation
Peak Forward Surge
Current
P_TOT
I_FSM
350mW
1.0A t=1s,Non-Repetitive
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
V_F
855mV I_FM = 10mA;
T_J = 25°C*
V_R=75Volts
I_R
2.5µA T_J = 25°C
50µA T_J = 150°C
Typical Junction
C_J
2 pF Measured at
Capacitance
1.0MHz, V_R=0V
Reverse Recovery
T_rr
4nS I_F=10mA
Time
V_R = 0V
R_L=500Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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