BAS19 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose diodes

Shanghai Lunsure Electronic
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Features
l Ideally Suited for Automatic Insertion
l 150^oC Junction Temperature
l Fast Switching speed
l Epitaxial Planar Die Construction
Mechanical Data
l Case: SOT-23, Molded Plastic
l Weight: 0.008 grams ( approx.)
l Marking Code
Part
Number
Continuous
Marking
Reverse
Voltage
V_R (V)
BAS19
JP
BAS20
JR
BAS21
JS
100
150
200
Repetitive
Peak
Reverse
Voltage
V_RRM (V)
120
200
250
Maximum Ratings @ 25^oC Unless Otherwise Specified
Parameter
Symbol Value Unit
Non-repetitive
Peak Reverse Voltage
@ t=1us
@ t=1s
I_FSM
2.5
0.5
A
Average Rectified Forward Current I_{F(AV) 200}⁽¹⁾ mA
Forward DC Current at T_amb=25^oC
I_F
200⁽²⁾ mA
Repetitive Peak Forward Current
I_FRM 625 mA
Power Dissipation up to T_amb=25^oC ^P_tot
Thermal Resistance Junction to
Ambient
R_qJA
250 mW
430 ^o_C/W
Operating & Storage Temperature T_j, T_STG -65~150 ^o_C
Notes: (1) Measured under pulse conditions;
Pulse time = t_p <= 0.3ms
(2) Device on fiberglass substrate,
See layout on next page
BAS19
THRU
BAS21
Small
Signal Diodes
250mW
SOT-23
A
D
CB
F
E
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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