1N5711 Datasheet, PDF (1/2 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

Shanghai Lunsure Electronic
Technology Co.,Ltd
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1N6263
1N5711
Features
• High Reverse Breakdown Voltage
• Low Forward Voltage Drop
• For General Purpose Application
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 300°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Peak Reverse
Voltage
1N6263
1N5711
1
( ) 

* +,
- '

;<<

;4!

V_RRM
-_



60V
70V
<-

!-



=
>

Power Dissipation
Junction Temperature
 +
$ ,
1'

1 

P_TOT
TJ
 _

400mW
125°C
 

Infinite Heat sink
'
@

1'
>

A1 
 )

Maximum
Instantaneous
Forward Voltage
V_F
0.41V
1.0V
I_FM = 1.0mA;
IFM = 15mA
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I_R
200nA
V_R=50Volts
T_J = 25°C
Typical Junction
Capacitance
CJ
2pF
Measured at
1.0MHz, V_R=0V
Reverse Recovery
Time
I_F=5mA
T_rr
1.0nS V_R = 6V
R_L=100Ω
Note: Valid provided that leads at a distance of 4mm from case are
kept ambient temperature.
400 mWatt Small
Signal Schottky Diode
60 to 70 Volts
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
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