1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4151
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
1N4151
SMALL SIGNAL SWITCHING DIODE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Reverse voltage
VR
Peak reverse voltage
VRM
Average rectified current, Half wave rectification with
IAV
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25
IFSM
Power dissipation at TA=25
Ptot
Junction temperature
Storage temperature range
TJ
TSTG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
Value
50
75
1501)
500
5001)
175
-65 to + 175
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Units
Volts
Volts
mA
Ma
Mw
Forward voltage
Leakage current at VR=50V
Symbols
Min.
VF
IR
Typ.
Max.
1
50
Units
Volts
nA
at VR=20V, TJ=150
IR
Junction capacitance at VR=VF=0V
CJ
75
Reverse breakdown voltage tested with 5 A pulse
V(BR)R
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA,
trr
from IF=10mA to IR=1mA to IR=1mA, VR=6V.RL=100
trr
Thermal resistance junction to ambient
R JA
Rectification efficience at f=100MHz,VRF=2V
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
50
A
2
pF
4
ns
4.000
ns
3501)
K/W
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