1N4148 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

CE
CHENYI ELECTRONICS
1N4148
SMALL SIGNAL SWITCHING DIODE
FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-Melf case with the type
designation LL4148
MECHANICAL DATA
. Case: DO-35 glass case
. Polarity: Color brand denotes cathode end
. Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Symbol
Value
Reverse voltage
VR
75
Peak reverse voltage
VRM
100
Average rectified current, Half wave rectification with
IAV
150
Resistive load at TA=25 and F 50Hz
Surge forward current at t<1S and TJ=25
IFSM
500
Power dissipation at TA=25
Ptot
5001)
Junction temperature
Storage temperature range
TJ
TSTG
175
-65 to + 175
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified)
Units
Volts
Volts
mA
mA
mW
Symbols
Min.
Typ.
Forward voltage
VF
Leakage current at VR=20V
IR
at VR=75V
IR
at VR=20V, TJ=150
IR
Junction capacitance at VR=VF=0V
CJ
Voltage rise when switching ON tested with 50mA
Vfr
pulse Tp=0.1 S, Rise time<30 S, fp=5 to 100KHz
Reverse recovery time from IF=10mA to IR=1mA,
trr
VR=6V, RL=100
Thermal resistance junction to ambient
R JA
Rectification efficience at f=100MHz,VRF=2V
0.45
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Max.
1
25
5
50
4
2.5
4
350
Units
Volts
nA
nA
nA
pF
Volts
ns
K/W
Page 1 of 3