1N17 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SCHOTTKY BARRIER RECTIFIER

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Features
• High Current Capability
• Low Power loss
• High Efficiency
• Low Forward Voltage Drop
• Metal Silicon junction, majority carrier conduction
Maximum Ratings
• Operating Temperature: -55°C to +125°C
• Storage Temperature: -55°C to +125°C
• Typical Thermal Resistance: 50^oC/W junction to Ambient
• For capacitive load. Derate current by 20%
Part Number
1N17
1N18
1N19
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
Maximum
RMS
Voltage
14V
21V
28V
Maximum DC
Blocking
Voltage
20V
30V
40V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Rectified Current
I_(AV)
1.0A T_A = 90°C
Peak Forward Surge
Current
I_FSM
25A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
1N17
V_F
1N18
1N19
0.45V
0.55V
0.60V
I_FM = 1.0A;
T_C = 25°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
0.5mA T_C = 25°C
10mA T_C = 100°C
Typical Junction
Capacitance
C_J
110pF
Measured at
1.0MHz, V_R=4.0V
Note: 300 us pulse width, 1% duty cycle
1N17
THRU
1N19
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
R-1
D
A
Cathode Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
NOTE
MIN
MAX
MIN
MAX
A
0.116 0.140 2.90
3.50
B
0.091 0.102 2.30
2.60
C
0.020 0.024 0.50
0.60
D
0.787
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