CHT5551PT Datasheet, PDF (3/3 Pages) Chenmko Enterprise Co. Ltd. – NPN SILICON Transistor

RATING CHARACTERISTIC CURVES ( CHT5551PT)
Typical Pulsed Current Gain
vs Collector Current
500
V _CE = 5V
300
200 ^{Tj=125 °C}
Tj=25 °C
100
Tj=-55 °C
30
20
10
5
1
10
100
I _C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Base Current
1.0
Ic=10mA
0.8
0.6
0.4
0.2
0
0.1
0.2
0.3
0.5
1.0
I _B - BASE CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
1.0
Ic/IB=10
0.8
0.6
0.4
0.2
0
0.1
1.0
10
100
I _C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
1.0
Ic/IB=10
0.8
0.6
0.4
0.2
0
0.1
1.0
10
100
I _C - COLLECTOR CURRENT (mA)