CHM8958JPT Datasheet, PDF (3/5 Pages) Chenmko Enterprise Co. Ltd. – Dual Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM8958JPT )
P-Channel Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -24 V, V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
-30
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-10V, ID=-5A
VGS=-4.5V, ID=-4A
V_DS = -5V , I_D = -5A
-1
-3
V
42 52
mΩ
60 80
10
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-15V, ID=-5.3A
VGS=-10V
V_DD= -15V
ID = -1.0A, VGS= -10 V
RGEN= 6 Ω
11 14
1.7
nC
2.3
12 25
5
10
nS
57 110
24 50
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.3A, VGS= 0 V (Note 2)
-1.3 A
-1.2 V