CHM7350JPT Datasheet, PDF (3/3 Pages) Chenmko Enterprise Co. Ltd. – Dual Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM7350JPT )
P-Channel Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -100 V,V_GS = 0 V
V_GS = 20V,V_DS = 0 V
V_GS = -20V, V_DS = 0 V
-100
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = -250 µA
R_{DS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-1.5A}
g _FS
Forward Transconductance
V_DS = -5V , I_D = -1.5A
Dynamic Characteristics
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
V_DS = -25V, V_GS = 0V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-80V, ID=-1.5A
VGS=-10V
V_DD= -50V
ID = -1A , VGS= -10V
RGEN= 22 Ω
-1
-3
V
250 320 ^mΩ
7
S
576
120
pF
32
16 21
3.5
nC
5.0
14 30
8.0 20
nS
60 120
20 40
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.4A, VGS= 0 V (Note 2)
-1.4 A
-1.6 V