CHM11C2JPT Datasheet, PDF (3/3 Pages) Chenmko Enterprise Co. Ltd. – Dual Enhancement Mode Field Effect Transistor

RATING CHARACTERISTIC CURVES ( CHM11C2JPT )
P-Channel Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BV_DSS Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
I GSSF
I GSSR
Gate-Body Leakage
Gate-Body Leakage
V_GS = 0 V, I_D = -250 µA
V_DS = -16 V, V_GS = 0 V
V_GS = 8V, V_DS = 0 V
V_GS = -8V, V_DS = 0 V
-20
V
-1
µA
+100 nA
-100 nA
ON CHARACTERISTICS (Note 2)
V_GS(th) Gate Threshold Voltage
R_{DS(ON) Static Drain-Source On-Resistance}
g _FS
Forward Transconductance
V_DS = V_GS, I_D = -250 µA
VGS=-4.5V, ID=-2.2A
VGS=-2.5V, ID=-1.8A
V_DS = -16V, I_D = -2.2A
-0.6
-1.5 V
50 90
mΩ
80 120
46
S
SWITCHING CHARACTERISTICS ^{(Note 4)}
Qg Total Gate Charge
Qgs Gate-Source Charge
Q gd Gate-Drain Charge
t on
Turn-On Time
tr
Rise Time
t off
Turn-Off Time
tf
Fall Time
VDS=-6V, ID=-2.2A
VGS=-4.5V
V_DD= -10V
ID = -2.2A, VGS= -4.5 V
RGEN= 6 Ω
19.4 25
3
nC
5
20 28
21 30
nS
76 106
56 78
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Drain-Source Diode Forward Current (Note 1)
V SD
Drain-Source Diode Forward Voltage IS = -1.8A, VGS= 0 V (Note 2)
-4.3 A
-1.0 V