CHEMT3PT Datasheet, PDF (3/3 Pages) Chenmko Enterprise Co. Ltd. – Dual Silicon Transistor

RATING CHARACTERISTIC CURVES ( CHEMT3PT )
2SA1037K Typical Electrical Characteristics
Fig.1 Grounded emitter propagation
characteristics
−50
Ta=100˚C
−20
25˚C
−40˚C
−10
VCE=−6V
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 -1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
characteristics
−10
Ta=25˚C
−35.0
−31.5
−8
−28.0
−24.5
−6
−21.0
−17.5
−4
−14.0
−10.5
−2
−7.0
−3.5µA
IB=0
0
−0.4 −0.8 −1.2 −1.6 −2.0
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 DC current gain vs.
collector current (1)
500
Ta=25˚C
VCE=−5V
−3V
−1V
200
100
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current (2)
500
Ta=100˚C
VCE=−6V
25˚C
200
−40˚C
Fig. 5 Collector-emitter saturation
voltage vs. collector current
−1
Ta=25˚C
−0.5
Fig.6 Collector-emitter saturation
voltage vs. collector current
−1
lC/lB=10
−0.5
−0.2
−0.2
100
IC/IB=50
Ta=100˚C
50
−0.1
20
−0.1
25˚C
−40˚C
10
−0.05
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Gain bandwidth product vs.
emitter current
1000
Ta=25˚C
VCE=−12V
500
200
100
50
0.5 1 2
5 10 20 50 100
EMITTER CURRENT : IE (mA)