2SC5663TPT Datasheet, PDF (3/3 Pages) Chenmko Enterprise Co. Ltd. – Low Ferquency NPN Transistor

RATING CHARACTERISTIC CURVES ( 2SC5663TPT )
!Electrical characteristic curves
1000
VCE = 2V
500
200
100
50
20
10
5
2
1
0
0.5
1.0
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
1000
Ta = 25°C
500
200
100
50
20 ^{IC/IB = 50}
10
20
5
10
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
Ta = 125°C
VCE = 2V
500
25°C
-40°C
200
100
50
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
10000
IC/IB = 20
5000
Ta = -40°C
2000
25°C
125°C
1000
500
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
1000
IE = 0A
500
f = 1MHz
Ta = 25°C
200
100
50
Cib
20
10
Cob
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
1000
500
200
100
50
Ta = 125°C
25°C
20
-40°C
10
5
IC/IB = 20
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( Ι )
1000
500 VCE = 2V
Ta = 25°C
200 ^Pulsed
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage