CHUMF7PT Datasheet, PDF (2/5 Pages) Chenmko Enterprise Co. Ltd. – Power Management (Dual Transistor)

CHDTC123E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
NOTE.1
P_C
Power dissipation
NOTE.2
TSTG
Storage temperature
MIN.
−
-10
−
−
−
MAX.
50
+20
100
100
150
UNIT
V
V
mA
mW
−55
+150
O_C
TJ
Junction temperature
−
150
O_C
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SC5585 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
BVCEO _{Collector-emitter breakdown voltage}
IC=1mA
BVCBO Collector-base breakdown voltage
IC=10uA
BVEBO Emitter-base breakdown voltage
IE=10uA
ICBO Collector cut-off current
VCB=15V
IEBO Emitter cut-off current
VEB=6V
hFE DC current gain
VCE(sat) _{Collector-emitter saturation voltage}
VCE=2V,IC=10mA
IC=200mA,IB=10mA
Cob Collector output capacitance
VCB=10V,IE=0mA,f=1MHZ
MIN.
12
15
6
−
−
270
−
−
fT
Transition frequency
VCE=2V,IE=-10mA,f=100MHZ ^−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
90
7.5
320
MAX.
−
−
−
100
100
680
250
−
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz
CHDTC123E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
G1
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=20mA; VO=5.0V
IE=-5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
20
−
0.8
−
TYP.
−
−
0.1
−
−
−
2.2
1.0
250
MAX.
−
3.0
0.3
3.8
0.5
−
−
1.2
−
UNIT
V
V
V
mA
uA
−
KΩ
−
MHz