CHUMF23PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Power Management (Dual Transistor)

CHDTC114E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
NOTE.1
P_C
Power dissipation
NOTE.2
TSTG
Storage temperature
MIN.
−
-10
−
−
−
MAX.
50
+40
50
100
150
UNIT
V
V
mA
mW
−55
+150
O_C
TJ
Junction temperature
−
150
O_C
Note
1. Characteristics of built-in transistor.
2. 120mW per element must not be exceeded.
Each terminal mounter on a recommended land.
2SA1774 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
BVCEO _{Collector-emitter breakdown voltage}
IC=-50uA
-60
BVCBO Collector-base breakdown voltage
IC=-1mA
-50
BVEBO Emitter-base breakdown voltage
IE=-50uA
-6
ICBO Collector cut-off current
VCB=-60V
−
IEBO Emitter cut-off current
VEB=-6V
−
hFE DC current gain
VCE=-6V,IC=-1mA
180
VCE(sat) _{Collector-emitter saturation voltage}
IC=-50mA,IB=-5mA
−
Cob Collector output capacitance
VCB=-12V,IE=0mA,f=1MHZ −
Transition frequency
fT
VCE=-12V,IE=2mA,f=100MHZ −
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
−
4
140
MAX.
−
−
−
-100
-100
390
-500
5
−
UNIT
V
V
V
nA
nA
−
mV
pF
MHz
CHDTC114E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
G1
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=10mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
IE=-5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
30
7
0.8
−
TYP.
−
−
0.1
−
−
−
10
1.0
MAX.
−
3.0
0.3
0.88
0.5
−
13
1.2
UNIT
V
V
V
mA
uA
−
KΩ
−
250
−
MHz