CHUMF19PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Power Management (Dual Transistor)

CHDTC123E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
NOTE.1
P_C
Power dissipation
NOTE.2
TSTG
Storage temperature
MIN.
−
-10
−
−
−
MAX.
50
+20
100
100
150
UNIT
V
V
mA
mW
−55
+150
O_C
TJ
Junction temperature
−
150
O_C
Note
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SC4617 CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
BVCEO _{Collector-emitter breakdown voltage}
BVCBO Collector-base breakdown voltage
BVEBO Emitter-base breakdown voltage
ICBO
IEBO
hFE
VCE(sat)
Cob
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
CONDITIONS
IC=50uA
IC=1mA
IE=50uA
VCB=60V
VEB=7V
VCE=6V,IC=1mA
IC=50mA,IB=5mA
VCB=12V,IE=0mA,f=1MHZ
MIN.
60
50
7
−
−
120
−
−
fT
Transition frequency
VCE=12V,IE=-2mA,f=100MHZ ^−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
TYP.
−
−
−
−
−
−
−
2
180
MAX.
−
−
−
100
100
560
0.4
3.5
−
UNIT
V
V
V
nA
nA
−
V
pF
MHz
CHDTC123E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
G1
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=20mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=20mA; VO=5.0V
IE=-5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
20
−
0.8
−
TYP.
−
−
0.1
−
−
−
2.2
1.0
250
MAX.
−
3.0
0.3
3.8
0.5
−
−
1.2
−
UNIT
V
V
V
mA
uA
−
KΩ
−
MHz