CHUMD4PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Digital Silicon Transistor

CHDTA114Y LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCC
Supply voltage
VIN
Input voltage
IO
IC(Max.)
DC Output current
PTOT
Total power dissipation
Tamb ≤ 25 ^OC, Note 1
TSTG
Storage temperature
TJ
Junction temperature
RθJ-S
Thermal resistance
junction - soldering point
MIN.
−
-40
−
−
−
−55
−
−
Note
1. Transistor mounted on an FR4 printed-circuit board.
MAX.
-50
+6
-70
-100
150
+150
150
140
UNIT
V
V
mA
mW
O_C
O_C
O_C/W
CHDTC114E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=10mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
IC=5mA, VCE=10.0V
f==100MHz
MIN.
0.5
−
−
−
−
30
7.0
0.8
−
TYP.
−
−
0.1
−
−
−
10.0
1.0
250
MAX.
−
3.0
0.3
0.88
0.5
−
13.0
1.2
−
UNIT
V
V
V
mA
uA
KΩ
MHz
CHDTA114Y CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
1.Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=-100uA; VCC=-5.0V
IO=-1.0mA; VO=-0.3V
IO=-5mA; II=-0.25mA
VI=-5.0V
VI=0V; VCC=-50V
IO=-5.0mA; VO=-5.0V
IC=-5mA, VCE=-10.0V
f==100MHz
MIN.
-0.3
−
−
−
−
68
7.0
3.7
−
TYP.
−
−
-0.1
−
−
−
10.0
4.7
250
MAX.
−
-1.4
-0.3
-0.88
-0.5
−
13.0
5.7
−
UNIT
V
V
V
mA
uA
KΩ
MHz