CHUMC4PT Datasheet, PDF (2/4 Pages) Chenmko Enterprise Co. Ltd. – Dual Digital Silicon Transistor

CHDTC144E LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VCC
Supply voltage
CONDITIONS
VIN
Input voltage
IO
IC(Max.)
PTOT
DC Output current
Total power dissipation
Tamb ≤ 25 ^OC, Note 1
TSTG
Storage temperature
MIN.
−
-10
−
−
−
MAX.
50
+40
30
100
150
UNIT
V
V
mA
mW
−55
+150
O_C
TJ
Junction temperature
Note
Transistor mounted on an FR4 printed-circuit board.
−
150
O_C
CHDTA114Y CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=-100uA; VCC=-5.0V
IO=-1.0mA; VO=-0.3V
IO=-5mA; II=-0.25mA
VI=-5.0V
VI=0V; VCC=-50V
IO=-5.0mA; VO=-5.0V
IC=-5mA, VCE=-10.0V
f==100MHz
MIN.
-0.3
−
−
−
−
68
7.0
3.7
−
TYP.
−
−
-0.1
−
−
−
10.0
4.7
250
MAX.
−
-1.4
-0.3
-0.88
-0.5
−
13.0
5.7
−
UNIT
V
V
V
mA
uA
KΩ
MHz
CHDTC144E CHARACTERISTICS
T_amb = 25 °C unless otherwise speciÞed.
SYMBOL
VIoff)
VI(on)
VO(on)
II
IC(off)
hFE
R1
R2/R1
fT
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
Note
Pulse test: tp≤300uS; δ≤0.02.
CONDITIONS
IO=100uA; VCC=5.0V
IO=10mA; VO=0.3V
IO=10mA; II=0.5mA
VI=5V
VI=0V; VCC=50V
IO=5mA; VO=5.0V
IE=-5mA, VCE=10.0V
f==100MHz
MIN.
−
3.0
−
−
−
68
32.9
0.8
−
TYP.
−
−
0.1
−
−
−
47.0
1.0
250
MAX.
0.5
−
0.3
0.18
0.5
−
61.1
1.2
−
UNIT
V
V
V
mA
uA
KΩ
MHz